Compositionally graded contact layers in quantum-well infrared photodetectors
Identifieur interne : 00A610 ( Main/Repository ); précédent : 00A609; suivant : 00A611Compositionally graded contact layers in quantum-well infrared photodetectors
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Abstract
We have observed a threshold voltage, below which no photocurrent flows, in a class of midwave quantum-well infrared photodetectors using (In,Ga)As/(In,Al)As lattice matched to InP substrates. We propose that this threshold voltage is the result of internal fields established at the interface between doped contact layers and the doped quantum wells in the detector. We show that compositionally graded contact layers can be used to eliminate the threshold voltage and to enhance the low-bias performance of the detectors. © 2004 American Institute of Physics.
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Leavitt</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783-1197</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0165792</idno><date when="2004-04-05">2004-04-05</date><idno type="stanalyst">PASCAL 04-0165792 AIP</idno><idno type="RBID">Pascal:04-0165792</idno><idno type="wicri:Area/Main/Corpus">00BB58</idno><idno type="wicri:Area/Main/Repository">00A610</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared detectors</term><term>Photoconductivity</term><term>Photodetectors</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7240</term><term>7363H</term><term>8560G</term><term>0757K</term><term>8105E</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Photodétecteur</term><term>Photoconductivité</term><term>Détecteur IR</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have observed a threshold voltage, below which no photocurrent flows, in a class of midwave quantum-well infrared photodetectors using (In,Ga)As/(In,Al)As lattice matched to InP substrates. 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